![]() A detection system detects the secondary electrons and generates an image data frame of the target region. A source generates an incident electron beam, and a scanning system for controllably deflecting the incident electron beam to scan the incident electron beam over a target region on the substrate such that secondary electrons are emitted therefrom. The reference contour image is used to detect defects in the array of cells on the substrate.Īnother embodiment relates to a system for detecting defects in an array on a substrate. A reference contour image which includes contours of the reference image is also generated. A reference image is generated using a cell image that was previously determined to be defect free. One embodiment relates to a method of inspecting an array of cells on a substrate. It is highly desirable to improve methods and apparatus for the detection and classification of defects imaged by electron beam instrumentation. The classification of a defect may be used to determine its cause such that appropriate adjustments may be made in the manufacturing process so as to improve its yield. The detected defects may also be classified, either manually or automatically, into different classes or categories. The detected defects may be subsequently reviewed by further imaging. These images are then analyzed numerically to detect abnormalities (referred to as defects) in the manufactured substrate. The emitted electrons are detected, and the detection data is typically converted into images of the surface of the specimen. In a conventional electron beam (e-beam) inspection instrument, a manufactured substrate (such as a silicon wafer or a reticle) is scanned with a focused beam of electrons which results in the emission of secondary electrons from the substrate surface. The present invention relates to inspection and review of substrates, such as, for example, semiconductor wafers and reticles for lithography. 29, 2013, entitled “Ebeam Array Inspection (Detection and Classification) of Patterned Defects in Semiconductor Wafers Using Golden Cell Contours,” the disclosure of which is hereby incorporated by reference in its entirety. The present application claims the benefit of U.S. ![]() CROSS-REFERENCE TO RELATED APPLICATION(S)
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